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50110 5D100 S0MCF2PC CEP10 05DB2 B80C1000 74LS162 4013B
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 DSSK 20-013A DSSK 20-015A
Power Schottky Rectifier
with common cathode
Preliminary Data
IFAV = 2x10 A VRRM = 130 V VF = 0.65 V
VRSM V 130 150
VRRM V 130 150
Type
A C A
TO-220 AB
A C A
DSSK 20-013A DSSK 20-015A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 165C; rectangular, d = 0.5 TC = 165C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = tbd A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive
Maximum Ratings 35 10 20 200 tbd tbd 18000 -55...+175 175 -55...+150 A A A A mJ A V/ms C C C W Nm g
Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0
Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters
TC = 25C mounting torque typical
105 0.4...0.6 2
Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses
Symbol IR VF
Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 10 A; IF = 10 A; IF = 20 A; TVJ = 125C TVJ = 25C TVJ = 125 C
Characteristic Values typ. max. 0.5 5.0 0.65 0.79 0.72 1.4 0.5 mA mA V V V K/W K/W
Dimensions see outlines.pdf
RthJC RthCH
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions.
007
(c) 2000 IXYS All rights reserved
1-2
DSSK 20-013A DSSK 20-015A
100 A IF IR 10 mA
TVJ=175C
1000 pF
1 150C
125C
CT
0.1 10
100C TVJ = 175C 125C 25C
100
0.01 75C
50C 25C TVJ= 25C
0.001
1 0.0
0.0001 0.2 0.4 0.6 0.8 1.0 V 1.2 VF 0 50 100 V VR 150
10 0 50 100 V VR 150
Fig. 1 Maximum forward voltage drop characteristics
40 A 30 IF(AV) 20 d=0.5 DC
Fig. 2 Typ. value of reverse current IR versus reverse voltage VR
30 W 25 P(AV) 20 15 10 d= DC 0.5 0.33 0.25 0.17 0.08
Fig. 3 Typ. junction capacitance CT versus reverse voltage VR
10000
A IFSM
1000
10 5 0 0 40 80 120 TC 160 C 0 0 5 10 15 20 25 IF(AV)
30 A
100 10
100
1000 s 10000 tP
Fig. 4 Average forward current IF(AV) versus case temperature TC
2 1 K/W ZthJC
D=0.5 0.33 0.25 0.17
Fig. 5 Forward power loss characteristics
0.08
Single Pulse
0.1
0.01 0.0001
DSSK 20-013A
0.001
0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
007
(c) 2000 IXYS All rights reserved
2-2


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